Effect of X-Ray on the properties of AlGaAs semiconductor Laser

Mahfooth Mohammed Ameen, Wlla; Jasem Mohammed, Sabri

doi:10.32894/kujss.2010.41129

Effect of X-Ray on the properties of AlGaAs semiconductor Laser

Authors

Wlla Mahfooth Mohammed Ameen

Sabri Jasem Mohammed

10.32894/kujss.2010.41129

Abstract

In this research effect caused by X-Ray on the properties of AlGaAs laser has been carried auto at different times ,there properties include the I-V and I-P at 180oC. It is noted that these properties has change when the laser is exposed to X-ray radiation also the stimulated emission is completely eliminated at moderate exposure times, but at longer exposure times (45-90)min the laser break down and both stimulated and spontaneous emission were completely disappear. Creased with the disappearing of each at the catalytic spontaneous resurrections.

{"scholar_in_index":0,"scholar_link":"https://scholar.google.com/scholar?q=%2210.32894%2Fkujss.2010.41129%22&hl=en&num=10","scholar_title":"","scholar_cited_by":"","scholar_checked_at":"2026-07-09 11:07:49"}