In this research effect caused by X-Ray on the properties of AlGaAs laser has been carried auto at different times ,there properties include the I-V and I-P at 180oC. It is noted that these properties has change when the laser is exposed to X-ray radiation also the stimulated emission is completely eliminated at moderate exposure times, but at longer exposure times (45-90)min the laser break down and both stimulated and spontaneous emission were completely disappear. Creased with the disappearing of each at the catalytic spontaneous resurrections.
Mahfooth Mohammed Ameen, W., & Jasem Mohammed, S. (2010). Effect of X-Ray on the properties of AlGaAs semiconductor Laser. Kirkuk Journal of Science, 5(1), 67-76. doi: 10.32894/kujss.2010.41129
MLA
Wlla Mahfooth Mohammed Ameen; Sabri Jasem Mohammed. "Effect of X-Ray on the properties of AlGaAs semiconductor Laser". Kirkuk Journal of Science, 5, 1, 2010, 67-76. doi: 10.32894/kujss.2010.41129
HARVARD
Mahfooth Mohammed Ameen, W., Jasem Mohammed, S. (2010). 'Effect of X-Ray on the properties of AlGaAs semiconductor Laser', Kirkuk Journal of Science, 5(1), pp. 67-76. doi: 10.32894/kujss.2010.41129
VANCOUVER
Mahfooth Mohammed Ameen, W., Jasem Mohammed, S. Effect of X-Ray on the properties of AlGaAs semiconductor Laser. Kirkuk Journal of Science, 2010; 5(1): 67-76. doi: 10.32894/kujss.2010.41129
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