In this research effect caused by X-Ray on the properties of AlGaAs laser has been carried auto at different times ,there properties include the I-V and I-P at 180oC. It is noted that these properties has change when the laser is exposed to X-ray radiation also the stimulated emission is completely eliminated at moderate exposure times, but at longer exposure times (45-90)min the laser break down and both stimulated and spontaneous emission were completely disappear. Creased with the disappearing of each at the catalytic spontaneous resurrections.
Mahfooth Mohammed Ameen,W and Jasem Mohammed,S . (2010). Effect of X-Ray on the properties of AlGaAs semiconductor Laser. Kirkuk Journal of Science, 5(1), 67-76. doi: 10.32894/kujss.2010.41129
MLA
Mahfooth Mohammed Ameen,W , and Jasem Mohammed,S . "Effect of X-Ray on the properties of AlGaAs semiconductor Laser", Kirkuk Journal of Science, 5, 1, 2010, 67-76. doi: 10.32894/kujss.2010.41129
HARVARD
Mahfooth Mohammed Ameen W, Jasem Mohammed S. (2010). 'Effect of X-Ray on the properties of AlGaAs semiconductor Laser', Kirkuk Journal of Science, 5(1), pp. 67-76. doi: 10.32894/kujss.2010.41129
CHICAGO
W Mahfooth Mohammed Ameen and S Jasem Mohammed, "Effect of X-Ray on the properties of AlGaAs semiconductor Laser," Kirkuk Journal of Science, 5 1 (2010): 67-76, doi: 10.32894/kujss.2010.41129
VANCOUVER
Mahfooth Mohammed Ameen W, Jasem Mohammed S. Effect of X-Ray on the properties of AlGaAs semiconductor Laser. Kirkuk J. Sci.. 2010;5(1):67-76. doi: 10.32894/kujss.2010.41129
