Kirkuk Journal of Science

Kirkuk Journal of Science

Design the Impact of Temperature on the Modulation Bandwidth of InGaAs Vertical Cavity Surface Emitting Lasers (VCSELs) for Efficient Optical Interconnect

Document Type : Research Paper

Authors
1 Department of Physics, Faculty of Science and Health, Koya University, Kurdistan Region - Iraq
2 Department of Physics, Faculty of Science and Health, Koya University, Koya, Kurdistan Region - Iraq
Abstract
This simulation work, based on the design of an 850 nm InGaAs/AlGaAs quantum well (QWs) vertical cavity surface emitting laser (VCSEL), presents significant challenges, particularly due to the limitations of device bandwidth at higher temperatures. We propose a comprehensive modelling approach to optimize the dynamic performance of a VCSEL structure with an oxide aperture diameter of 6 µm, specifically to achieve higher bandwidth at lower bias currents. The MATLAB simulation evaluates the variation of critical parameters, such as threshold current, differential efficiency, output power, and small-signal modulation, across a wide operating temperature range. Our findings indicate that in static analysis, the threshold current exhibits a positive temperature dependence, increasing with rising temperature, while both differential efficiency and optical output power decrease. Dynamic analysis reveals that although the 3-dB modulation bandwidth reduces with temperature, the VCSEL maintains high-speed performance exceeding 36 GHz at 20 °C and 24 GHz at 120 °C under a bias current of 14 mA. The temperature dependence of the modulation current efficiency factor (MCEF) provides insight into optimizing VCSEL structures for reliable high-speed operation over broad thermal conditions.
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Volume 20, Issue 3
Summer 2025
Page 31-40

  • Receive Date 15 June 2025
  • Revise Date 25 July 2025
  • Accept Date 26 July 2025