Study an Effect of Thiourea Concentration on the Structural, Optical and Electrical Properties of (Cu2S) film Prepared by Chemical Bath Deposition (CBD)

Muhammed, Ali M.; Ibrahim, Abdulmajeed E.; Ismail, Raid A.

doi:10.32894/kujss.2019.14.3.9

Study an Effect of Thiourea Concentration on the Structural, Optical and Electrical Properties of (Cu2S) film Prepared by Chemical Bath Deposition (CBD)

Document Type : Research Paper

Authors

Ali M. Muhammed ¹

Abdulmajeed E. Ibrahim ¹

Raid A. Ismail ²

¹ Department of Physics, College of Pure Science, Tikrit University, Tikrit, Iraq.

² Department of Applied Science, University of Technology, Baghdad, Iraq

10.32894/kujss.2019.14.3.9

Abstract

In the present study, (Cu2S) thin films were deposited by using chemical bath deposition (CBD) technique. The effect of the preparation conditions on film properties was studied by varying the molar concentration (M) of thiourea [CS(NH2)2] (0.6, 1, 1.3, 1.6 M). The optical properties data revealed that the optical Energy gap was in the range (2.68-2.75eV). The structural properties of the films were investigated by X-ray diffraction (XRD). The results indicate that they have a nanocrystalline structure with chalcocite phase and crystalline structure at the diffraction angle 32.7° corresponds to the crystalline level (431) which belongs to the monoclinic crystal structure. The results of the scanning electron microscopy (SEM) showed the formation of nanostructured Cu2S with grain size in the range of (90-140nm). Atomic Force Microscope (AFM) was used to study the surface topography and grain distribution on the film surface. Energy dispersive X-ray (EDX) was used to investigate the elemental analysis of the film. Raman peaks were observed at (265-474cm-1). Hall Effect showed that all (Cu2S) films have p-type conductivity due to the copper, and the electrical conductivity increases with increase the molecular concentration of thiourea. .

Keywords

Thiourea Concentration

Chemical bath

Raman

grain size