Effect of Annealing on Some Properties of Zn2SnO4 Thin Films Prepared by PLD Technique

Mohammed, Sabri J.; Aadim, Kadhim A.; Ameen, Maad M.

doi:10.32894/kujss.2018.13.4.8

Effect of Annealing on Some Properties of Zn2SnO4 Thin Films Prepared by PLD Technique

Document Type : Research Paper

Authors

¹ Department of Physics, College of Education, University of Tikrit, Tikrit, Iraq.

² Department of Physics, College of Sciences, University of Baghdad, Baghdad, Iraq.

³ Department of Physics, College of Sciences, University of Kirkuk, Kirkuk, Iraq.

10.32894/kujss.2018.13.4.8

Abstract

In this paper, the investigation of structural and optical properties of Zn2SnO4 thin films were studied. The films are performed on glass substrates by pulsed laser technique (PLD) using laser Nd: YAG at wavelength of 1064 nm with 800 mj laser energy using repetition rate of 6 Hz. and average 400 laser pulses at room temperature and annealing by tubular quartz furnace at temperature (573,773) K for 2 hours with air. XRD measurements showed that the structure for all samples is polycrystalline with a cubic nanostructure. Surface morphology was studied using scanning electron microscopy SEM and atomic force microscopy AFM. After annealing, the roughness of the surface and the mean grain size were increased. Optical properties as a function to wavelength in the range (300-1100 nm) have been studied. Absorption spectra of Zn2SnO4 thin films showed that absorption decreases with increasing annealing temperature. Direct energy gap for a Zn2SnO4 thin film was increases with increasing temperature for all samples due to crystal growth. The optical properties such as extinction coefficient, refractive index, and dielectric constant were also studied. .

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