In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB – β ) values according to the irradiation times . Also the transistor used as an amplifier which has the reverse feedback to study the irradiation effect on the amplification factor (Aƒ) . it is found that the values of (VCE,IC) and (VB, β) have been decreased as the irradiation times decreased . the transistor showed a littlie changes of (Aƒ) when the reverse feedback used and the output signal suffering no any distortion .
M. Mohammad, W. (2010). Study the Effect of X-Ray on BJT Transistor at Different Periods of Time. Kirkuk Journal of Science, 5(2), 65-75. doi: 10.32894/kujss.2010.41433
MLA
Walla M. Mohammad. "Study the Effect of X-Ray on BJT Transistor at Different Periods of Time". Kirkuk Journal of Science, 5, 2, 2010, 65-75. doi: 10.32894/kujss.2010.41433
HARVARD
M. Mohammad, W. (2010). 'Study the Effect of X-Ray on BJT Transistor at Different Periods of Time', Kirkuk Journal of Science, 5(2), pp. 65-75. doi: 10.32894/kujss.2010.41433
VANCOUVER
M. Mohammad, W. Study the Effect of X-Ray on BJT Transistor at Different Periods of Time. Kirkuk Journal of Science, 2010; 5(2): 65-75. doi: 10.32894/kujss.2010.41433
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