Studying effect of  Zr concentration on the properties of Pb(Zrx,Ti1-x)O3 /n-Si and Pb(Zrx,Ti1-x)O3 /n-PS Photodetectors prepared by pulsed laser deposition (PLD)

A. Adem, Kadhim; Hamed Mohammed, Ghuson; Kareem Dahash Ali, Abdul; Abdulla Radwan, Hameed

doi:10.32894/kujss.2017.124961

Studying effect of Zr concentration on the properties of Pb(Zrx,Ti1-x)O3 /n-Si and Pb(Zrx,Ti1-x)O3 /n-PS Photodetectors prepared by pulsed laser deposition (PLD)

Authors

Kadhim A. Adem

Ghuson Hamed Mohammed

Abdul Kareem Dahash Ali

Hameed Abdulla Radwan

10.32894/kujss.2017.124961

Abstract

Pb(Zrx,Ti1-x)O3 (PZT) powder was prepared via solid-state reaction and deposited on n-type silicon wafers ( Pb(Zrx,Ti1-x)O3/n-Si ) and on n-type porous silicon ( Pb(Zrx,Ti1-x)O3/n-PS ) of (111) orientation and (0.015 Ω.cm) resistivity by (PLD). We used the photoelectrochemical etching cell for creation the porosity layers on the silicon wafers. Using thermal evaporation system to evaporate Al on the back of the wafer to make an ohmic contact thick film. Spectral measurements ( responsivity, quantum efficiency, detectivity and noise equivalent power ) for Pb(Zrx,Ti1-x)O3 /n-Si and Pb(Zrx,Ti1-x)O3 /n-PS devices show ( 1.2482, 0.4422% , 2.207×1010 and 0.45×10-10 ) and ( 1.5695, 0.5561%, 2.618×1010 and 0.36×10-10 ) respectively. the favorite x content of Zr is 0.5 for all samples. spectral parameters for devices assign to the stable behavior of the samples after etching procedure and its values are larger than that for without porous

Keywords

concentration

PLD

Zrx

PS and Pb

Si Photodetectors